K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

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Five read cycles sequentially output the manufacturer code EChand the device code and XXh, 4th cycle ID, 50h respectively.


Total 1, NAND cells reside in a block. Since programming the last page does not employ caching, the dataseet time has to be that of Page Program. Freight and Payment Recommended logistics Recommended bank. Any undefined command inputs are prohibited except for above command set of Table 1.

VIL can undershoot to Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Invalid blocks are defined as blocks that contain one or more bad bits. The internal high voltage generator is reset when the WP pin is active low.

Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one.


Those are latched on the rising edge of WE. Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell. Two types of operations are available: RE or CE does not need to be toggled for updated status.


The program performance may be dramatically improved by cache program when there are lots of pages of data to be programmed. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis.

The M byte X8 device or M word X16 device physical space requires 29 X8 or 28 X16 addresses, thereby requiring five cycles for addressing: Any intentional erasure of the original invalid block information is prohibited.

An internal voltage detector disables all functions whenever Vcc is below about 1. A program k9f2g08uu0m can be performed in typical ? The said additional block failure rate does not include those reclaimed blocks. This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design. Please create an account or Sign in.

SeekIC only pays the seller after confirming k9v2g08u0m have received your order. A read operation with “35h” command and the address of the source page moves the whole byte X8 device or word X16 device data into the internal data buffer. Random page address programming is prohibited.

When the next set of data is inputted with the Cache Program command, tCBSY is affected by the progress of pending internal l9f2g08u0m. The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks.


(PDF) K9F2G08U0M Datasheet download

Yes End Figure 3. The Page Program confirm command 10h initiates the programming process.

Add the data protection Vcc guidence for k9f2g08j0m. Month Sales Transactions. The device supports random data input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random data input command 85h. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page. Each of the 32 cells resides in a different page.


In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption. The random read mode is enabled when the page address is changed. For this reason, two bit ECC is recommended for copy-back operation.

Devices with invalid block s have the same quality level as devices with all valid blocks and have the same AC and DC characteristics.

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